STF6NM60N Description
This device is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. 4 2.1 (curves) .............................
STF6NM60N Key Features
- 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
- Switching