STFI15N60M2-EP Description
This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-.
STFI15N60M2-EP Key Features
- Fully insulated and low profile package with increased creepage path from pin to heatsink plate
- Extremely low gate charge
- Excellent output capacitance (COSS) profile
- 100% avalanche tested
- Zener-protected