STFW8N120K5 Description
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 G(1) technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. STFW8N120K5 Electrical ratings 1 Electrical ratings Table.
STFW8N120K5 Key Features
- Industry’s lowest RDS(on) x area
- Industry’s best FoM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected