STG60H65FBD7 Datasheet | STMicroelectronics

Trench gate field-stop 650 V, 60 A high-speed HB series IGBT die in D7 packing EGCD Product status link STG60H65FBD7 Product summary Order code 6.32 x 4.90 mm 60 A Die size 6.32 x 4.90 mm Packing D7 Features - Maximum junction temperature: TJ = 175 °C - High speed switching series - Minimized tail current - Very low saturation voltage: VCE(sat) = 1.65 V (typ) @ IC = 60 A - Safe paralleling - Tight parameter distribution Applications - Solar - Welding - High frequency converter Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum promise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. DS10879 - Rev 3 - July 2023 For further information contact your local STMicroelectronics sales office. .st. Mechanical parameters Mechanical...