Datasheet Details
| Part number | STG60H65FBD7 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 423.90 KB |
| Description | IGBT |
| Download | STG60H65FBD7 Download (PDF) |
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| Part number | STG60H65FBD7 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 423.90 KB |
| Description | IGBT |
| Download | STG60H65FBD7 Download (PDF) |
|
|
|
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.
Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
STG60H65FBD7 Datasheet Trench gate field-stop 650 V, 60 A high-speed HB series IGBT die in D7 packing C G E EGCD Product status link STG60H65FBD7 Product summary Order code STG60H65FBD7 VCE 6.32 x 4.90 mm ICN 60 A Die size 6.32 x 4.
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