STGB15M65DF2 Key Features
- 6 µs of short-circuit withstand time
- VCE(sat) = 1.55 V (typ.) @ IC = 15 A
- Tight parameter distribution
- Safer paralleling
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
- Part: STGB15M65DF2
- Description: Trench gate field-stop IGBT
- Manufacturer: STMicroelectronics
- Size: 915.56 KB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| STGB15H60DF | Trench gate field-stop IGBT |
| STGB10H60DF | 600V 10A IGBT |
| STGB10M65DF2 | Trench gate field-stop IGBT |
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| STGB10NC60K | short-circuit rugged IGBT |