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STGB30H60DFB - 600V 30A IGBT

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STMicroelectronics

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STGB30H60DFB 600V 30A IGBT by STMicroelectronics - Datasheet Preview — Datasheet preview – STGB30H60DFB

Datasheet Details

Part number	STGB30H60DFB
Manufacturer	STMicroelectronics
File Size	3.27 MB
Description	600V 30A IGBT
Datasheet	STGB30H60DFB Datasheet
Additional preview pages of the STGB30H60DFB datasheet.

Product details

Description

These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.

Features

Maximum junction temperature: TJ = 175 °C.
High speed switching series.
Minimized tail current.
Low saturation voltage: VCE(sat) = 1.55 V (typ. ) @ IC = 30 A.
Tight parameter distribution.
Safe paralleling.
Positive VCE(sat) temperature coefficient.
Low thermal resistance.
Very fast soft recovery antiparallel diode.

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Published: Apr 14, 2020 |