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STGB30H60DLLFBAG - Automotive-grade trench gate field-stop IGBT

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General Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

Overview

STGB30H60DLLFBAG Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Internal schematic.

Key Features

  • AEC-Q101 qualified.
  • Maximum junction temperature: TJ = 175 °C.
  • Logic level gate drive.
  • High speed switching series.
  • Minimized tail current.
  • VCE(sat) = 1.7 V (typ. ) @ IC = 30 A.
  • Low VF soft recovery co-packaged diode.
  • Tight parameters distribution.
  • Safer paralleling.
  • Low thermal resistance.

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