STGB30H60DLLFBAG Overview
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum promise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
STGB30H60DLLFBAG Key Features
- AEC-Q101 qualified
- Maximum junction temperature: TJ = 175 °C
- Logic level gate drive
- High speed switching series
- Minimized tail current
- VCE(sat) = 1.7 V (typ.) @ IC = 30 A
- Low VF soft recovery co-packaged diode
- Tight parameters distribution
- Safer paralleling
- Low thermal resistance