STGB30H60DLLFBAG
Features
- AEC-Q101 qualified
- Maximum junction temperature: TJ = 175 °C
- Logic level gate drive
- High speed switching series
- Minimized tail current
- VCE(sat) = 1.7 V (typ.) @ IC = 30 A
- Low VF soft recovery co-packaged diode
- Tight parameters distribution
- Safer paralleling
- Low thermal resistance
Applications
- Ignition
Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum promise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Order code STGB30H60DLLFBAG
Table 1: Device summary Marking
GB30H60DLLFB
Package D²PAK
Packaging Tape and reel
October 2016
Doc ID029886 Rev 1
This is information on a product in full production.
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Contents
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