STGB30M65DF2 Key Features
- 6 µs of short-circuit withstand time
- VCE(sat) = 1.55 V (typ.) @ IC = 30 A
- Tight parameters distribution
- Safer paralleling
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
- Part: STGB30M65DF2
- Manufacturer: STMicroelectronics (official site)
- Size: 876.14 KB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| STGB30H60DF | 30A high speed trench gate field-stop IGBT |
| STGB30H60DFB | 600V 30A IGBT |
| STGB30H60DLLFBAG | Automotive-grade trench gate field-stop IGBT |
| STGB30H65DFB2 | high-speed HB2 series IGBT |
| STGB30NC60K | short circuit rugged IGBT |
STGB30M65DF2 Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.