STGD19N40LZ Datasheet | STMicroelectronics

Automotive-grade 390 V internally clamped IGBT ESCIS 180 m J - production data 3 1 DPAK Features - AEC-Q101 qualified - 180 m J of avalanche energy @ TC = 150 °C, L = 3 m H - ESD gate-emitter protection - Gate-collector high voltage clamping - Logic level gate drive - Low saturation voltage - High pulsed current capability - Gate and gate-emitter resistor Figure 1. Internal schematic diagram C (2 or TAB) Applications - Pencil coil electronic ignition driver G (1) RG RGE Description This application-specific IGBT utilizes the most advanced Power MESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition systems. E (3) SC30180 Order code STGD19N40LZ Table 1. Device summary Marking Packages GD19N40LZ...