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STGD19N40LZ - Automotive-grade 390V internally clamped IGBT

Datasheet Summary

Description

This application-specific IGBT utilizes the most advanced PowerMESH™ technology.

The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities.

Features

  • AEC-Q101 qualified.
  • 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH.
  • ESD gate-emitter protection.
  • Gate-collector high voltage clamping.
  • Logic level gate drive.
  • Low saturation voltage.
  • High pulsed current capability.
  • Gate and gate-emitter resistor Figure 1. Internal schematic diagram C (2 or TAB).

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Datasheet Details

Part number STGD19N40LZ
Manufacturer STMicroelectronics
File Size 1.04 MB
Description Automotive-grade 390V internally clamped IGBT
Datasheet download datasheet STGD19N40LZ Datasheet
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STGD19N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - production data TAB 3 1 DPAK Features • AEC-Q101 qualified • 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH • ESD gate-emitter protection • Gate-collector high voltage clamping • Logic level gate drive • Low saturation voltage • High pulsed current capability • Gate and gate-emitter resistor Figure 1. Internal schematic diagram C (2 or TAB) Applications • Pencil coil electronic ignition driver G (1) RG RGE Description This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities.
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