Datasheet Details
| Part number | STGD19N40LZ |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 1.04 MB |
| Description | Automotive-grade 390V internally clamped IGBT |
| Datasheet |
 STGD19N40LZ Datasheet
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General Description
This application-specific IGBT utilizes the most advanced PowerMESH™ technology.
The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities.
Key Features
- AEC-Q101 qualified.
- 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH.
- ESD gate-emitter protection.
- Gate-collector high voltage clamping.
- Logic level gate drive.
- Low saturation voltage.
- High pulsed current capability.
- Gate and gate-emitter resistor Figure 1. Internal schematic diagram C (2 or TAB).