STGIPN3H60-H Description
Features IPM 3 A, 600 V, 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes Optimized for low electromagnetic interference VCE(sat) negative temperature coefficient 3.3 V, 5 V, 15 V CMOS/TTL inputs parators with hysteresis and pull down/pull up resistors Undervoltage lockout Internal bootstrap diode Interlocking function Smart shutdown function parator for...
STGIPN3H60-H Key Features
- IPM 3 A, 600 V, 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes
- Optimized for low electromagnetic interference
- VCE(sat) negative temperature coefficient
- 3.3 V, 5 V, 15 V CMOS/TTL inputs
- Undervoltage lockout
- Internal bootstrap diode
- Interlocking function
- Smart shutdown function
- parator for fault protection against overtemperature and overcurrent
- Op amp for advanced current sensing