Datasheet4U Logo Datasheet4U.com

STGIPN3H60-H - 3-phase IGBT inverter bridge

Key Features

  • IPM 3 A, 600 V, 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes.
  • Optimized for low electromagnetic interference.
  • VCE(sat) negative temperature coefficient.
  • 3.3 V, 5 V, 15 V CMOS/TTL inputs comparators with hysteresis and pull down/pull up resistors.
  • Undervoltage lockout.
  • Internal bootstrap diode.
  • Interlocking function.
  • Smart shutdown function.
  • Comparator for fault protection against overtemperature and over.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STGIPL14K60 short-circuit rugged IGBT ST Microelectronics
STGIPS10K60A short-circuit rugged IGBT ST Microelectronics
STGIPS20K60 IGBT intelligent power module ST Microelectronics
STG2017 Dual N-Channel FET SamHop Microelectronics
STG2454 Dual N-Channel FET SamHop Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STGIPN3H60 3-phase inverter bridge IGBT
STGIPN3H60A 3-phase inverter bridge IGBT
STGIPN3H60AT 3-phase inverter bridge IGBT
STGIPN3H60T-H IGBT
STGIPN3HD60-H IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STGIPN3H60-H SLLIMM™-nano small low-loss intelligent molded module IPM, 3 A, 600 V, 3-phase IGBT inverter bridge Datasheet - production data Applications  3-phase inverters for motor drives  Dish washers, refrigerator compressors, heating systems, air-conditioning fans, draining and recirculation pumps Description Features  IPM 3 A, 600 V, 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes  Optimized for low electromagnetic interference  VCE(sat) negative temperature coefficient  3.