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STGO30H60DLLFBAG - IGBT

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STMicroelectronics

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STGO30H60DLLFBAG IGBT by STMicroelectronics - Datasheet Preview — Datasheet preview – STGO30H60DLLFBAG

Datasheet Details

Part number	STGO30H60DLLFBAG
Manufacturer	STMicroelectronics
File Size	1.45 MB
Description	IGBT
Datasheet	STGO30H60DLLFBAG Datasheet
Additional preview pages of the STGO30H60DLLFBAG datasheet.

Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

Features

TAB 8 8 1 TO-LL type B C(TAB) G(1) E(2, 3, 4, 5, 6, 7, 8) 1.
AEC-Q101 qualified.
Maximum junction temperature: TJ = 175 °C.
Logic level gate drive.
High-speed switching series.
Minimized tail current.
VCE(sat) = 1.6 V (typ. ) @ IC = 30 A.
Low VF soft-recovery co-packaged diode.
Tight parameter distribution.
Safer paralleling.
Low thermal resistance G1CTABE2345678.

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Published: Mar 1, 2023 |