STMicroelectronics STGO30H60DLLFBAG
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.| Part No. | STGO30H60DLLFBAG |
|---|---|
| Datasheet | STGO30H60DLLFBAG Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive-grade 600V 30A very high speed IGBT |
| Buy | Stock & Price |
FEATURES
TAB 8 8 1 TO-LL type B C(TAB) G(1) E(2, 3, 4, 5, 6, 7, 8) 1● AEC-Q101 qualified
● Maximum junction temperature: TJ = 175 °C
● Logic level gate drive
● High-speed switching series
● Minimized tail current
● VCE(sat) = 1.6 V (typ.) @ IC = 30 A
● Low VF soft-recovery co-packaged diode
● Tight parameter distribution
● Safer paralleling
● Low thermal resistance G1CTABE2345678
APPLICATIONS
● Automotive injectionDESCRIPTION
Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGO30H60DLLFBAG Product summary Order code STGO30H60DLLFBAG Marking GO30H60DLL Package TO-LL type B Packing Tape and reel DS12913 - Rev 4 - January 2022 For further information contact your local STMicroelectronics sales office. STGO30H60DLLFBAG Electrical ratings 1 Electrical ratings Symbol VCES IC ICP(1) VGE IF IFP(1) PTOT TSTG TJ 1. tp<1 μs. Table 1. Absolute maximum ratings Parameter Collector-e...
