STMicroelectronics STGW40V60DF
The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.FEATURES
● Maximum junction temperature: TJ = 175 °C● Tail-less switching off
● VCE(sat) = 1.8 V (typ.) @ IC = 40 A
● Tight parameters distribution
● Safe paralleling
● Low thermal resistance
● Very fast soft recovery antiparallel diode
APPLICATIONS
● Welding● PFC converters - single phase input
● Solar inverters (string and central)
● Uninterruptable power supplies (UPS)
● EV charging - DC fast charging stations
DESCRIPTION
These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. DS9556 - Rev 13 - August 2026 For further information, contact your local STMicroelectronics sales office. STGFW40V60DF, STGW40V60DF Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGE = 0 V) Continuous collector current at TC = 25 °C IC Continuous collector cu...