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STGW40V60DF - Trench gate field-stop IGBT

Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure.

These devices are part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.

Features

  • Maximum junction temperature: TJ = 175 °C.
  • Tail-less switching off.
  • VCE(sat) = 1.8 V (typ. ) @ IC = 40 A.
  • Tight parameters distribution.
  • Safe paralleling.
  • Low thermal resistance.
  • Very fast soft recovery antiparallel diode G(1) E(3) NG1E3C2T.

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STGFW40V60DF, STGW40V60DF Datasheet Trench gate field-stop IGBT, V series 600 V, 40 A very high speed 1 TO-3PF 3 2 1 3 2 1 TO-247 C(2, TAB) Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.8 V (typ.) @ IC = 40 A • Tight parameters distribution • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode G(1) E(3) NG1E3C2T Applications • Welding • Power factor correction • UPS • Solar inverters • Chargers Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.
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