Datasheet4U Logo Datasheet4U.com

STGW40V60F - IGBT

Download the STGW40V60F datasheet PDF. This datasheet also covers the STGB40V60F variant, as both devices belong to the same igbt family and are provided as variant models within a single manufacturer datasheet.

Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure.

These devices are part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.

Features

  • Maximum junction temperature: TJ = 175 °C.
  • Tail-less switching off.
  • VCE(sat) = 1.8 V (typ. ) @ IC = 40 A.
  • Tight parameters distribution.
  • Safe paralleling.
  • Low thermal resistance.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STGB40V60F-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
STGW40NC60V N-CHANNEL IGBT ST Microelectronics
STGW40NC60WD N-CHANNEL IGBT ST Microelectronics
STGW45HF60WD ultra fast IGB ST Microelectronics
STGW45NC60VD Very Fast IGBT ST Microelectronics
STGW12NB60H N-CHANNEL IGBT ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STGW40V60DF Trench gate field-stop IGBT
STGW40H120DF2 1200V 40A high speed IGBT
STGW40H120F2 1200V 40A IGBT
STGW40H65DFB IGBT
STGW40H65DFB-4 IGBT

Full PDF Text Transcription

Click to expand full text
STGB40V60F, STGFW40V60F STGP40V60F, STGW40V60F Datasheet Trench gate field-stop IGBT, V series 600 V, 40 A very high speed TAB 3 1 D2PAK TAB 23 1 TO-3PF 3 2 TO-220 1 3 2 1 TO-247 C(2, TAB) G(1) E(3) G1C2TABE3_NO_DIODE Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.8 V (typ.) @ IC = 40 A • Tight parameters distribution • Safe paralleling • Low thermal resistance Applications • Welding • Power factor correction • UPS • Solar inverters • Chargers Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.
Published: |