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STGWT20V60F Datasheet IGBT

Manufacturer: STMicroelectronics

Overview: STGFW20V60F, STGW20V60F, STGWT20V60F 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data 1 3 2 1 TO-3PF TAB 3 2 1 TO-247 TO-3P 3 2 1 Figure 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.

The device is part of the "V" series of IGBTs, which represent an optimum promise E (3) between conduction and switching losses to maximize the efficiency of very high frequency converters.

Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Key Features

  • Maximum junction temperature: TJ = 175 °C.
  • Very high speed switching series.
  • Tail-less switching off.
  • Low saturation voltage: VCE(sat) = 1.8 V (typ. ) @ IC = 20 A.
  • Tight parameters distribution.
  • Safe paralleling.
  • Low thermal resistance.
  • Lead free package.

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