Datasheet Summary
STGFW20V60F, STGW20V60F, STGWT20V60F
600 V, 20 A very high speed trench gate field-stop IGBT
- production data
3 2 1
TO-3PF TAB
3 2 1
TO-247
TO-3P
3 2
Figure 1. Internal schematic diagram
C (2, TAB)
G (1)
Features
- Maximum junction temperature: TJ = 175 °C
- Very high speed switching series
- Tail-less switching off
- Low saturation voltage: VCE(sat) = 1.8 V (typ.)
@ IC = 20 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Lead free package
Applications
- Photovoltaic inverters
- Uninterruptible power supply
- Welding
- Power factor correction
- Very high frequency converters
Description
This device is an IGBT developed using an...