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STH13009 - High voltage fast-switching NPN power transistor

General Description

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds anh high voltage capability.

It uses a Hollow Emitter structure to enhance switching speeds.

Figure 1.

Key Features

  • . High voltage capability Low spread of dynamic parameters Very high switching speed.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STH13009 High voltage fast-switching NPN power transistor Preliminary data Features ■ ■ ■ . High voltage capability Low spread of dynamic parameters Very high switching speed Applications ■ Switching mode power supplies 1 2 3 Description The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds anh high voltage capability. It uses a Hollow Emitter structure to enhance switching speeds. Figure 1. TO-220 Internal schematic diagram Table 1. Device summary Marking H13009 Package TO-220 Packaging Tube Order code STH13009 October 2007 Rev 1 1/9 www.st.com 9 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Free Datasheet http://www.