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STH260N4LF7-2 - N-channel Power MOSFET

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General Description

These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Overview

STH260N4LF7-2, STH260N4LF7-6 N-channel 40 V, 1.2 mΩ typ., 180 A, STripFET™ F7 Power MOSFETs in H2PAK-2 and H2PAK-6 packages Datasheet − preliminary.

Key Features

  • 7$% 7$% uct(s)  d te Pro+3$.    +3$.  bsoleFigure 1. Internal schematic diagram - O' 7$%  te Product(s).
  •    Order code STH260N4LF7-2 STH260N4LF7-6 VDS 40 V RDS(on)max ID PTOT 1.6 mΩ 180 A 200 W.
  • Among the lowest RDS(on) on the market.
  • Excellent figure of merit (FoM).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness.

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