STH260N4LF7-2 - N-channel Power MOSFET

Product Overview

STMicroelectronics

Datasheet Details

Part number	STH260N4LF7-2
Manufacturer	STMicroelectronics
File Size	571.74 KB
Description	N-channel Power MOSFET
Datasheet	STH260N4LF7-2 Datasheet
Additional preview pages of the STH260N4LF7-2 datasheet.

Product details

Description

These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

7$% 7$% uct(s) d te Pro+3$. +3$. bsoleFigure 1. Internal schematic diagram - O'7$% te Product(s).
Order code STH260N4LF7-2 STH260N4LF7-6 VDS 40 V RDS(on)max ID PTOT 1.6 mΩ 180 A 200 W.
Among the lowest RDS(on) on the market.
Excellent figure of merit (FoM).
Low Crss/Ciss ratio for EMI immunity.
High avalanche ruggedness.

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Published: Jan 21, 2019 |