STH260N4LF7-2 Datasheet | STMicroelectronics

STH260N4LF7-2, STH260N4LF7-6 N-channel 40 V, 1.2 mΩ typ., 180 A, STrip FET™ F7 Power MOSFETs in H2PAK-2 and H2PAK-6 packages - preliminary data Features 7$% 7$% uct(s) d te Pro+3$. +3$. bsole Figure 1. Internal schematic diagram - O'7$% te Product(s)- Order code STH260N4LF7-2 STH260N4LF7-6 VDS 40 V RDS(on)max ID PTOT 1.6 mΩ 180 A 200 W - Among the lowest RDS(on) on the market - Excellent figure of merit (Fo M) - Low Crss/Ciss ratio for EMI immunity - High avalanche ruggedness Applications - Switching applications Description These N-channel Power MOSFETs utilize STrip FET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Obsole6 $0Y Order code STH260N4LF7-2 STH260N4LF7-6 Table 1. Device summary Marking Package 260N4LF7 H2PAK-2 260N4LF7 H2PAK-6...