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STH272N6F7-6AG
Automotive-grade N-channel 60 V, 0.95 mΩ typ., 180 A STripFET™ F7 Power MOSFET in H²PAK-6 package
Datasheet - production data
TAB 7
1
H2PAK-6 Figure 1: Internal schematic diagram
Features
Order code STH272N6F7-6AG
VDS 60 V
RDS(on) max. 1.5 mΩ
ID 180 A
Designed for automotive applications and AEC-Q101 qualified
Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
STH272N6F7-6AG Datasheet
