STH272N6F7-6AG
STH272N6F7-6AG is N-CHANNEL POWER MOSFET manufactured by STMicroelectronics.
Automotive-grade N-channel 60 V, 0.95 mΩ typ., 180 A STripFET™ F7 Power MOSFET in H²PAK-6 package
- production data
TAB 7
H2PAK-6 Figure 1: Internal schematic diagram
Features
Order code STH272N6F7-6AG
VDS 60 V
RDS(on) max. 1.5 mΩ
ID 180 A
- Designed for automotive applications and AEC-Q101 qualified
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
Applications
- Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing...
