STH272N6F7-6AG Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STH272N6F7-6AG Table 1: Device summary Marking Package 272N6F7 H²PAK-6 Packing Tape and reel March 2016 DocID029124 Rev 1 This is information on a product in full...
STH272N6F7-6AG Key Features
- Designed for automotive