STH80N10LF7-2AG - N-CHANNEL POWER MOSFET

Product Overview

STMicroelectronics

Datasheet Details

Part number	STH80N10LF7-2AG
Manufacturer	STMicroelectronics
File Size	598.69 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	STH80N10LF7-2AG Datasheet
Additional preview pages of the STH80N10LF7-2AG datasheet.

Product details

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

Order code STH80N10LF7-2AG VDS 100 V RDS(on) max. 10 mΩ.
AEC-Q101 qualified.
Among the lowest RDS(on) on the market.
Excellent FoM (figure of merit).
Low Crss/Ciss ratio for EMI immunity.
High avalanche ruggedness ID 80 A PTOT 110 W G(1) S(2, 3).

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Published: Jan 22, 2019 |