Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Features
- Order code STH80N10LF7-2AG
VDS 100 V
RDS(on) max. 10 mΩ.
- AEC-Q101 qualified.
- Among the lowest RDS(on) on the market.
- Excellent FoM (figure of merit).
- Low Crss/Ciss ratio for EMI immunity.
- High avalanche ruggedness
ID 80 A
PTOT 110 W
G(1) S(2, 3).
STH80N10LF7-2AG Datasheet
