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STH80N10LF7-2AG Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STH80N10LF7-2AG Datasheet Automotive-grade N-channel 100 V, 7 mΩ typ.

General Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Product status link STH80N10LF7-2AG Product summary Order code STH80N10LF7-2AG Marking 80N10LF7 Package H²PAK-2 Packing Tape and reel DS11708 - Rev 2 - January 2019 For further information contact your local STMicroelectronics sales office.

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Key Features

  • Order code STH80N10LF7-2AG VDS 100 V RDS(on) max. 10 mΩ.
  • AEC-Q101 qualified.
  • Among the lowest RDS(on) on the market.
  • Excellent FoM (figure of merit).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness ID 80 A PTOT 110 W G(1) S(2, 3).

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