STH90N55F4-2
STH90N55F4-2 is N-channel Power MOSFET manufactured by STMicroelectronics.
N-channel 55 V, 0.0064 Ω, 90 A, H2PAK STrip FET™ Deep GATE™ Power MOSFET
Features
Type
VDSS RDS(on) max
STH90N55F4-2 55 V
< 0.008 Ω t(s)- Exceptional dv/dt capability
- Extremely low on-resistance RDS(on) uc- 100% avalanche tested
90 A rod Applications te P- Switching applications ole Description bs The device is N-channel Power MOSFETs Odeveloped using ST’s STrip FET™ Deep GATE™ -technology. The device has a new gate structure )and is specially designed to minimize on-state t(sresistance to provide superior switching ducperformance.
2 3 3 1
H²PAK
Figure 1. Internal schematic diagram
$
'
Obsolete Pro 3
!-V
Table 1. Device summary Order code
Marking
Packages
Packaging
90N55F4
H²PAK
Tape and reel
August 2011
Doc ID 15608 Rev 4
1/16
.st.
Contents
Contents
1 Electrical ratings
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