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STHU32N65DM6AG Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STHU32N65DM6AG Datasheet Automotive-grade N-channel 650 V, 83 mΩ typ.

General Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.

Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Product status link STHU32N65DM6AG Product summary Order code STHU32N65DM6AG Marking 32N65DM6 Package HU3PAK Packing Tape and reel DS13782 - Rev 3 - November 2021 For further information contact your local STMicroelectronics sales office.

Key Features

  • Order code VDS RDS(on) max. ID TAB STHU32N65DM6AG 650 V 97 mΩ 37 A 7 1 HU3PAK Drain(TAB).
  • AEC-Q101 qualified.
  • Fast-recovery body diode.
  • Lower RDS(on) x area vs previous generation.
  • Low gate charge, input capacitance and resistance.
  • 100% avalanche tested.
  • Extremely dv/dt ruggedness.
  • Zener-protected.
  • Excellent switching performance thanks to the extra driving source pin Gate(1) Driver source (2) Power source (3,.

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