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STHU36N60DM6AG Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STHU36N60DM6AG Datasheet Automotive-grade N-channel 600 V, 84 mΩ typ.

General Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.

Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Product status link STHU36N60DM6AG Product summary Order code STHU36N60DM6AG Marking 36N60DM6 Package HU3PAK Packing Tape and reel DS13040 - Rev 3 - November 2021 For further information contact your local STMicroelectronics sales office.

Key Features

  • Order code STHU36N60DM6AG VDS 600 V RDS(on) max. 99 mΩ ID 29 A.
  • AEC-Q101 qualified.
  • Fast-recovery body diode.
  • Lower RDS(on) per area vs previous generation.
  • Low gate charge, input capacitance and resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected.
  • Excellent switching performance thanks to the extra driving source pin Gate(1) Driver source (2) Power source (3, 4, 5, 6, 7) N-chG1DS2PS3456.

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