Datasheet Summary
STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3
N-channel 620 V, 0.68 Ω typ., 8.4 A SuperMESH3™ Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220 packages
- production data
Features
Type
VDSS
RDS(on) max
Pw
STF10N62K3 STFI10N62K3 STI10N62K3 STP10N62K3
620 V
< 0.75 Ω
8.4 A(1) 8.4 A
30 W 125 W
1. Limited by package
- 100% avalanche tested
- Extremely high dv/dt capability
- Gate charge minimized
- Very low intrinsic capacitances
- Improved diode reverse recovery characteristics
- Zener-protected
Applications
- Switching applications
Description
These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology,...