STI10NM60N Overview
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
STI10NM60N Key Features
- Obsole- roduct(s)6
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance