Datasheet Summary
N-channel 600 V, 0.53 Ω typ.,10 A MDmesh™ II Power MOSFET in I²PAK package
- obsolete product
Features
)1 2 3 t(sI2PAK roducFigure 1. Internal schematic diagram te P'7$%
- Obsole- roduct(s)6
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Order code STI10NM60N
RDS(on)
@TJmax max.
650 V < 0.55 Ω
ID 10 A
PTOT 70 W
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
Applications
- Switching applications
Description
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the pany’s strip layout to yield one of the world’s...