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STI10NM60N Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STI10NM60N N-channel 600 V, 0.53 Ω typ.,10 A MDmesh™ II Power MOSFET in I²PAK package Datasheet - obsolete.

STI10NM60N datasheet preview

Datasheet Details

Part number	STI10NM60N
Manufacturer	STMicroelectronics
File Size	314.52 KB
Description	N-channel Power MOSFET
Datasheet	STI10NM60N-STMicroelectronics.pdf

General Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

It is therefore suitable for the most demanding high efficiency converters.

Key Features

TAB )1 2 3 t(sI2PAK roducFigure 1. Internal schematic diagram te P'7$% - Obsole.
roduct(s)6 $0Y Order code STI10NM60N VDS RDS(on) @TJmax max. 650 V < 0.55 Ω ID 10 A PTOT 70 W.
100% avalanche tested.
Low input capacitance and gate charge.
Low gate input resistance.

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