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STI10NM60N - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • TAB )1 2 3 t(sI2PAK roducFigure 1. Internal schematic diagram te P' 7$% - Obsole.
  •  roduct(s)6  $0Y Order code STI10NM60N VDS RDS(on) @TJmax max. 650 V < 0.55 Ω ID 10 A PTOT 70 W.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

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STI10NM60N N-channel 600 V, 0.53 Ω typ.,10 A MDmesh™ II Power MOSFET in I²PAK package Datasheet - obsolete product Features TAB )1 2 3 t(sI2PAK roducFigure 1. Internal schematic diagram te P' 7$% - Obsole*  roduct(s)6  $0Y Order code STI10NM60N VDS RDS(on) @TJmax max. 650 V < 0.55 Ω ID 10 A PTOT 70 W • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.