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STI175N4F6AG - N-channel Power MOSFET

Description

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Features

  • Order code VDS STI175N4F6AG 40 V RDS(on) max. 2.7 mΩ ID 120 A PTOT 190 W.
  • Designed for automotive.

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Full PDF Text Transcription

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STI175N4F6AG Automotive-grade N-channel 40 V, 2.1 mΩ typ., 120 A STripFET™ F6 Power MOSFET in an I²PAK package Datasheet - production data TAB 123 I²PAK Figure 1: Internal schematic diagram Features Order code VDS STI175N4F6AG 40 V RDS(on) max. 2.7 mΩ ID 120 A PTOT 190 W  Designed for automotive applications and AEC-Q101 qualified  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss Applications  Switching applications  Power tools Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
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