STI175N4F6AG
STI175N4F6AG is N-channel Power MOSFET manufactured by STMicroelectronics.
Automotive-grade N-channel 40 V, 2.1 mΩ typ., 120 A STrip FET™ F6 Power MOSFET in an I²PAK package
- production data
123 I²PAK Figure 1: Internal schematic diagram
Features
Order code
STI175N4F6AG 40 V
RDS(on) max.
2.7 mΩ
ID 120 A
PTOT 190 W
- Designed for automotive applications and AEC-Q101 qualified
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
Applications
- Switching applications
- Power tools
Description
This device is an N-channel Power MOSFET developed using the STrip FET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Order code STI175N4F6AG
Table 1: Device summary Marking 175N4F6
Package I²PAK
Packing Tube
January 2016
Doc ID028920 Rev 1
This is information on a product in full production.
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