Datasheet4U Logo Datasheet4U.com

STI24N60M2 Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Qg 22 Power MOSFET in D PAK, I PAK, TO-220 and TO-247 packages Datasheet − production data TAB 2 3 1 D2PAK TAB TAB 123 I2PAK 3 2 1 TO-220 3 2 1 TO-247 Figure 1.

General Description

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.

These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge.

They are therefore suitable for the most demanding high efficiency converters.

Key Features

  • Order codes VDS @ TJmax RDS(on) max ID STB24N60M2 STI24N60M2 STP24N60M2 STW24N60M2 650 V 0.19 Ω 18 A.
  • Extremely low gate charge.
  • Lower RDS(on) x area vs previous generation.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Zener-protected.

STI24N60M2 Distributor