STI24N60M2
STI24N60M2 is N-CHANNEL POWER MOSFET manufactured by STMicroelectronics.
STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2
N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Qg
Power MOSFET in D PAK, I PAK, TO-220 and TO-247 packages
- production data
2 3
D2PAK
I2PAK
3 2 1
TO-220
3 2 1
TO-247
Figure 1. Internal schematic diagram
D(2, TAB)
Features
Order codes VDS @ TJmax RDS(on) max ID
STB24N60M2 STI24N60M2 STP24N60M2 STW24N60M2
650 V
0.19 Ω 18 A
- Extremely low gate charge
- Lower RDS(on) x area vs previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener-protected
Applications
- Switching applications
G(1) S(3)
AM01476v1
Description
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the pany's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.
Order codes STB24N60M2 STI24N60M2 STP24N60M2...
