STI260N6F6 Datasheet | STMicroelectronics

STI260N6F6 STP260N6F6 N-channel 60 V, 0.0024 Ω, 120 A STrip FET™ VI Deep GATE™ Power MOSFET in TO-220 and I²PAK packages Features Order codes STI260N6F6 STP260N6F6 VDSS 60 V RDS(on) max < 0.003 Ω 120 A - Low gate charge - Very low on-resistance - High avalanche ruggedness Application - Switching applications Description These devices are N-channel Power MOSFETs developed using the 6th generation of STrip FET™ Deep GATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. I²PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram $4!" ' 3 !-V Table 1. Device summary Order codes STI260N6F6 STP260N6F6 Marking 260N6F6 Package I²PAK TO-220 Packaging Tube January 2012 Doc ID 17467 Rev...