STI28N60M2 Description
These devices are N-channel Power MOSFETs G(1) developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. S(3) AM15572V1 Order code STB28N60M2 STI28N60M2 STP28N60M2 STW28N60M2 Table.
STI28N60M2 Key Features
- Extremely low gate charge
- Excellent output capacitance (COSS) profile
- 100% avalanche tested
- Zener-protected