STI400N4F6 Key Features
- preliminary data
- Low gate charge
- Very low on-resistance
- High avalanche ruggedness
- Part: STI400N4F6
- Manufacturer: STMicroelectronics (official site)
- Size: 121.31 KB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| STI40N65M2 | N-channel Power MOSFET |
| STI410N4F7AG | N-channel Power MOSFET |
| STI45N10F7 | N-CHANNEL POWER MOSFET |
| STI47N60DM6AG | N-channel Power MOSFET |
| STI100N10F7 | N-Channel Power MOSFET |
STI400N4F6 Description
These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. TAB TAB 123 I²PAK 3 2 1 TO-220 Figure.