STI410N4F7AG Overview
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Obsolete S(3) AM01475v1_Tab Table 1: Device summary Order code Marking Package Packing STI410N4F7AG 410N4F7 I²PAK Tube June 2016 DocID029445 Rev 1 This is preliminary.
STI410N4F7AG Key Features
- OD(2, TAB) Product(sG(1)
- Designed for automotive