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STI410N4F7AG
Automotive N-channel 40 V, 1.5 mΩ typ., 180 A STripFET™ F7 Power MOSFET in an I²PAK package
Datasheet - preliminary data
Features
TAB
Product(s)1 2 3 leteI²PAK bsoFigure 1: Internal schematic diagram ) - OD(2, TAB) Product(sG(1)
Order code STI410N4F7AG
VDS 40 V
RDS(on) max.
1.8 mΩ
ID 180 A
PTOT 365 W
Designed for automotive applications Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
STI410N4F7AG Datasheet
