STL10LN80K5 Datasheet | STMicroelectronics

N-channel 800 V, 0.59 Ω typ., 6 A MDmesh™ K5 Power MOSFET in a Power FLAT™ 5x6 VHV package - production data 1 2 3 4 Power FLAT™ 5x6 VHV Figure 1: Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) S(1, 2, 3) 12 34 Top View Features Order code STL10LN80K5 VDS 800 V RDS(on) max. 0.66 Ω ID 6A - Industry’s lowest RDS(on) x area - Industry’s best figure of merit (Fo M) - Ultra-low gate charge - 100% avalanche tested - Zener-protected Applications - Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Order code STL10LN80K5 Table 1: Device summary Marking Package 10LN80K5 Power FLAT™ 5x6...