STL10N3LLH5 Datasheet | STMicroelectronics

N-channel 30 V, 0.015 Ω, 9 A, Power FLAT™ 3.3x3.3 STrip FET™ V Power MOSFET Features Order code STL10N3LLH5 VDSS 30 V RDS(on) max < 0.019 Ω 1. The value is rated according Rthj-pcb - RDS(on) - Qg industry benchmark - Extremely low on-resistance RDS(on) - Very low switching gate charge - High avalanche ruggedness - Low gate drive power losses ID 9 A (1) Applications - Switching applications - Automotive Description This device is an N-channel Power MOSFET developed using STMicroelectronics’ STrip FET™ V technology. The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class. Power FLAT™ 3.3x3.3 Figure 1. Internal schematic diagram 123 4 SSS G DDD D 876 5 BOTTOM VIEW AM10124V1 Table 1. Device summary Order code Marking 10N3L Package Power FLAT™ 3.3x3.3 Packaging Tape and reel August...