STL10N65M2 Datasheet | STMicroelectronics

N-channel 650 V, 0.85 Ω typ., 4.5 A MDmesh M2 Power MOSFET in a Power FLAT™ 5x6 HV package - production data Features Order code STL10N65M2 VDS 650 V RDS(on) max. 1.00 Ω ID 4.5 A 1 2 3 4 Power FLAT™ 5x6 HV Figure 1: Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) S(1, 2, 3) 12 34 Top View - Extremely low gate charge - Lower RDS(on) x area vs previous generation - Low gate input resistance - 100% avalanche tested - Zener-protected Applications - Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Order code STL10N65M2 Table 1: Device summary Marking Package 10N65M2 Power FLAT™ 5x6...