STL12N10F7 Datasheet | STMicroelectronics

N-channel 100 V, 11.3 mΩ typ., 12 A STrip FET™ F7 Power MOSFET in a Power FLAT™ 3.3x3.3 package D(5, 6, 7, 8) G(4) S(1, 2, 3) Features Order code RDS(on) max. 100 V 13.3 mΩ - Among the lowest RDS(on) on the market - Excellent Fo M (figure of merit) - Low Crss/Ciss ratio for EMI immunity - High avalanche ruggedness ID 12 A 8 76 5 Applications - Switching applications AM15810v1 Description This N-channel Power MOSFET utilizes STrip FET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status link STL12N10F7 Product summary Order code Marking 12N10 Package Power FLAT™ 3.3x3.3 Packing Tape and reel DS12044 - Rev...