STL12N10F7 - N-channel Power MOSFET

Product Overview

STMicroelectronics

Datasheet Details

Part number	STL12N10F7
Manufacturer	STMicroelectronics
File Size	568.89 KB
Description	N-channel Power MOSFET
Datasheet	STL12N10F7 Datasheet
Additional preview pages of the STL12N10F7 datasheet.

Product details

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

Order code VDS RDS(on) max. STL12N10F7 100 V 13.3 mΩ.
Among the lowest RDS(on) on the market.
Excellent FoM (figure of merit).
Low Crss/Ciss ratio for EMI immunity.
High avalanche ruggedness ID 12 A 8 76 5.

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Published: May 16, 2019 |