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STL12N10F7 - N-channel Power MOSFET

General Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Key Features

  • Order code VDS RDS(on) max. STL12N10F7 100 V 13.3 mΩ.
  • Among the lowest RDS(on) on the market.
  • Excellent FoM (figure of merit).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness ID 12 A 8 76 5.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STL12N10F7 Datasheet N-channel 100 V, 11.3 mΩ typ., 12 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 3.3x3.3 package D(5, 6, 7, 8) G(4) S(1, 2, 3) Features Order code VDS RDS(on) max. STL12N10F7 100 V 13.3 mΩ • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness ID 12 A 8 76 5 Applications • Switching applications 1234 AM15810v1 Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status link STL12N10F7 Product summary Order code STL12N10F7 Marking 12N10 Package PowerFLAT™ 3.