STL18N60M2 Datasheet | STMicroelectronics

N-channel 600 V, 0.278 Ω typ., 9 A MDmesh II Plus™ low Qg Power MOSFET in a Power FLAT™ 5x6 HV package - production data Features 1 2 3 4 Power FLAT™ 5x6 HV Figure 1. Internal schematic diagram D(5, 6, 7, 8) G(4) S(1, 2, 3) AM01476v1 Order code STL18N60M2 VDS @ TJmax 650 V RDS(on) max 0.308 Ω ID 9A - Extremely low gate charge - Lower RDS(on) x area vs previous generation - Low gate input resistance - 100% avalanche tested - Zener-protected Applications - Switching applications Description This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the pany's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Order code STL18N60M2 Table 1. Device summary Marking Package 18N60M2 Power FLAT™ 5x6...