STL18N65M2 Datasheet | STMicroelectronics

N-channel 650 V, 0.290 Ω typ., 8 A MDmesh™ M2 Power MOSFET in a Power FLAT™ 5x6 HV package - preliminary data Features 1 2 3 4 Power FLAT™ 5x6 HV Figure 1. Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) S(1, 2, 3) 12 34 Top View AM15540v3 Order codes STL18N65M2 VDS @ TJmax 715 V RDS(on) max 0.365 Ω ID 8A - Extremely low gate charge - Excellent output capacitance (Coss) profile - 100% avalanche tested - Zener-protected Applications - Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Order codes STL18N65M2 Table 1. Device summary Marking Package...