STL190N4F7AG Datasheet | STMicroelectronics

Automotive-grade N-channel 40 V, 1.68 mΩ typ., 120 A STrip FET™ F7 Power MOSFET in a Power FLAT™ 5x6 package - production data Figure 1: Internal schematic diagram Features Order code STL190N4F7AG VDS 40 V RDS(on) max 2.00 mΩ ID 120 A - Designed for automotive applications and AEC-Q101 qualified - Among the lowest RDS(on) on the market - Excellent Fo M (figure of merit) - Low Crss/Ciss ratio for EMI immunity - High avalanche ruggedness - Wettable flank package Applications - Switching applications Description This N-channel Power MOSFET utilizes STrip FET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STL190N4F7AG Table 1: Device summary Marking Package 190N4F7 Power FLAT™ 5x6 Packaging Tape and reel June 2016 Doc ID028792 Rev 2 This is information on a product in full...