STL19N60M2 Datasheet | STMicroelectronics

N-channel 600 V, 0.278 Ω typ., 11 A MDmesh™ M2 Power MOSFET in a Power FLAT™ 8x8 HV package 5 432 Power FLAT™ 8x8 HV Drain(5) Gate(1) Driver source (2) Power source (3, 4) NG1DS2PS34D5Z Features Order code STL19N60M2 VDS 600 V - Extremely low gate charge - Excellent output capacitance (COSS) profile - 100% avalanche tested - Zener-protected RDS(on) max. 0.308 Ω ID 11 A Applications - Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STL19N60M2 Product summary Order code Marking 19N60M2 Package Power FLAT™ 8x8 HV Packing Tape and reel DS11488 - Rev...