STL19N60DM2 Datasheet | STMicroelectronics

N-channel 600 V, 0.280 Ω typ., 11 A MDmesh™ DM2 with fast diode Power MOSFET in a Power FLAT™ 8x8 HV package - preliminary data Features 6 6 6 - %RWWRPYLHZ ' 3RZHU)/$7Œ[+9 Figure 1. Internal schematic diagram D(3) Order code VDS @ TJmax RDS(on)max STL19N60DM2 650 V 0.320 Ω ID 11 A - Fast-recovery body diode - Extremely low gate charge and input capacitance - Low on-resistance RDS(on) - 100% avalanche tested - Extremely high dv/dt ruggedness - Zener-protected Applications - Switching applications G(1) S(2) AM01476v6 Description This high voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode series. It offers very low recovery charge and time (Qrr, trr) bined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Order code STL19N60DM2 Table 1. Device summary Marking Package 19N60DM2...