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STL19N60DM2 Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STL19N60DM2 N-channel 600 V, 0.280 Ω typ., 11 A MDmesh™ DM2 with fast diode Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet - preliminary.

General Description

This high voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode series.

It offers very low recovery charge and time (Qrr, trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Order code STL19N60DM2 Table 1.

Key Features

  • 6  6  6  .
  •  %RWWRPYLHZ '  3RZHU)/$7Œ[+9 Figure 1. Internal schematic diagram D(3) Order code VDS @ TJmax RDS(on)max STL19N60DM2 650 V 0.320 Ω ID 11 A.
  • Fast-recovery body diode.
  • Extremely low gate charge and input capacitance.
  • Low on-resistance RDS(on).
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected.