STL20N6F7 Overview
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. S(1, 2, 3) Order code STL20N6F7 1234 Marking 20N6F AM15810v1 Table 1: Device summary Package PowerFLAT™ 3.3x3.3 Packing Tape and reel June 2015 DocID027433 Rev 3 This is...
STL20N6F7 Key Features
- Among the lowest RDS(on) on the market
- Excellent figure of merit (FoM)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness