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STL20NM20N - N-CHANNEL MOSFET

General Description

This 200V MOSFET with a new advanced layout brings all unique advantages of MDmesh technology to lower voltages.

Key Features

  • VDSS 200 V RDS(on) < 0.105 Ω ID 20 A Figure 1: Package TYPE STL20NM20N s s s s s s s s.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STL20NM20N N-CHANNEL 200V - 0.088Ω - 20A PowerFLAT™ ULTRA LOW GATE CHARGE MDmesh™ II MOSFET www.datasheet4u.com Table 1: General Features VDSS 200 V RDS(on) < 0.105 Ω ID 20 A Figure 1: Package TYPE STL20NM20N s s s s s s s s WORLDWIDE LOWEST GATE CHARGE TYPICAL RDS(on) = 0.088Ω IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE (1mm MAX) VERY LOW THERMAL RESISTANCE LOW GATE RESISTANCE LOW INPUT CAPACITANCE HIGH dv/dt and AVALANCHE CAPABILITIES PowerFlat (6x5) (Chip Scale Package) DESCRIPTION This 200V MOSFET with a new advanced layout brings all unique advantages of MDmesh technology to lower voltages. The device exhibits worldwide lowest gate charge for any given onresistance.