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STL25N60M2-EP - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 EP enhanced performance technology.

Key Features

  • Order code VDS @ TJmax RDS(on) max. ID 5 STL25N60M2-EP 650 V 0.206 Ω 16 A 4 32 1 PowerFLAT™ 8x8 HV Figure 1: Internal schematic diagram.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • Very low turn-off switching losses.
  • 100% avalanche tested.
  • Zener-protected.

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STL25N60M2-EP N-channel 600 V, 0.184 Ω typ., 16 A MDmesh™ M2 EP Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max. ID 5 STL25N60M2-EP 650 V 0.206 Ω 16 A 4 32 1 PowerFLAT™ 8x8 HV Figure 1: Internal schematic diagram  Extremely low gate charge  Excellent output capacitance (COSS) profile  Very low turn-off switching losses  100% avalanche tested  Zener-protected Applications  Switching applications  Tailored for Very High Frequency Converters (f > 150 kHz) Order code STL25N60M2-EP Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 EP enhanced performance technology.