STL260N4F7 Datasheet | STMicroelectronics

N-channel 40 V, 0.9 mΩ typ., 120 A, STrip FET™ F7 Power MOSFET in a Power FLAT™ 5x6 package - preliminary data Figure 1: Internal schematic diagram Features Order code STL260N4F7 VDS 40 V RDS(on)max 1.1 mΩ ID 120 A - Among the lowest RDS(on) on the market - Excellent Fo M (figure of merit) - Low Crss/Ciss ratio for EMI immunity - High avalanche ruggedness Applications - Switching applications Description This N-channel Power MOSFET utilizes STrip FET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STL260N4F7 Table 1: Device summary Marking Package 260N4F7 Power FLAT™ 5x6 Packaging Tape and reel June 2016 Doc ID028217 Rev 3 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/14 .st....