STL260N4F7 Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STL260N4F7 Table 1: Device summary Marking Package 260N4F7 PowerFLAT™ 5x6 Packaging Tape and reel June 2016 DocID028217 Rev 3 This is preliminary information on a...
STL260N4F7 Key Features
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness