Datasheet4U Logo Datasheet4U.com

STL2N80K5 - N-channel Power MOSFET

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in onresistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Features

  • 1 2 3 4 PowerFLAT™ 5x6 VHV Order code STL2N80K5 VDS 800 V RDS(on)max. 4.5 Ω.
  • Industry’s lowest RDS(on).
  • Industry’s best figure of merit (FoM).
  • Ultra low gate charge.
  • 100% avalanche tested.
  • Zener-protected ID 1.5 A Figure 1. Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) S(1, 2, 3) 12 34 Top View AM15540v1.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STL23N85K5 18 A PowerFLAT 8x8 HV Zener-protected SuperMESH 5 Power MOSFET ST Microelectronics
STL23NM60ND FDmesh II Power MOSFET(with fast diode) PowerFLAT (8x8) HV ST Microelectronics
STL2545N TRENCH SCHOTTKY BARRIER DIODE JILIN SINO
STL25A45N TRENCH SCHOTTKY BARRIER DIODE JILIN SINO
STL25N15F3 Power MOSFETs ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STL200N45LF7 N-channel Power MOSFET
STL20DN10F7 Dual N-CHANNEL POWER MOSFET
STL20DNF06LAG N-channel Power MOSFET
STL20N6F7 N-CHANNEL POWER MOSFET
STL20NF06LAG N-channel Power MOSFET

Full PDF Text Transcription

Click to expand full text
STL2N80K5 N-channel 800 V, 3.7 Ω typ., 1.5 A MDmesh™ K5 Power MOSFET in a PowerFLAT™ 5x6 VHV package Datasheet - production data Features 1 2 3 4 PowerFLAT™ 5x6 VHV Order code STL2N80K5 VDS 800 V RDS(on)max. 4.5 Ω • Industry’s lowest RDS(on) • Industry’s best figure of merit (FoM) • Ultra low gate charge • 100% avalanche tested • Zener-protected ID 1.5 A Figure 1. Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) S(1, 2, 3) 12 34 Top View AM15540v1 Applications • Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.
Published: |