STL8N10F7 Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STL8N10F7 Marking 8N10F Table 1: Device summary Package PowerFLAT™ 3.3x3.3 Packing Tape and reel November 2017 DocID025076 Rev 3 This is information on a product in...
STL8N10F7 Key Features
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness