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STL8N10F7 Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STL8N10F7 N-channel 100 V, 17 mΩ typ., 8 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 3.3x3.

General Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Order code STL8N10F7 Marking 8N10F Table 1: Device summary Package PowerFLAT™ 3.3x3.3 Packing Tape and reel November 2017 DocID025076 Rev 3 This is information on a product in full production.

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Key Features

  • Order code VDS RDS(on) max. ID PTOT STL8N10F7 100 V 20 mΩ 8 A 2.9 W.
  • Among the lowest RDS(on) on the market.
  • Excellent FoM (figure of merit).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness.

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