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STL8N10LF3 - N-channel Power MOSFET

Description

This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance.

Table 1.

Features

  • Order code STL8N10LF3 VDS 100 V RDS(on) max 35 mΩ ID 7.8 A (1) 1. The value is rated according to Rthj-pcb.
  • Logic level VGS(th) 175 °C maximum junction temperature 100% avalanche rated 1 2 3 4 PowerFLAT™ 5x6.

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Datasheet Details

Part number STL8N10LF3
Manufacturer STMicroelectronics
File Size 819.81 KB
Description N-channel Power MOSFET
Datasheet download datasheet STL8N10LF3 Datasheet
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Full PDF Text Transcription

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STL8N10LF3 N-channel 100 V, 25 mΩ typ., 7.8 A STripFET™ III Power MOSFET in a PowerFLAT™ 5x6 package Datasheet — production data Features Order code STL8N10LF3 VDS 100 V RDS(on) max 35 mΩ ID 7.8 A (1) 1. The value is rated according to Rthj-pcb ■ ■ ■ Logic level VGS(th) 175 °C maximum junction temperature 100% avalanche rated 1 2 3 4 PowerFLAT™ 5x6 Applications ■ ■ Switching applications Automotive Figure 1. Internal schematic diagram Description This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance. $    ' 3   !-V Table 1.
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