Datasheet Summary
N-channel 100 V, 25 mΩ typ., 7.8 A STripFET™ III Power MOSFET in a PowerFLAT™ 5x6 package
- production data
Features
Order code STL8N10LF3 VDS 100 V RDS(on) max 35 mΩ ID 7.8 A (1)
1. The value is rated according to Rthj-pcb
- -
- Logic level VGS(th) 175 °C maximum junction temperature 100% avalanche rated
1 2 3 4
PowerFLAT™ 5x6
Applications
- -
Switching applications Automotive Figure 1. Internal schematic diagram
Description
This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching...