STL8N10LF3
Overview
This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance. $ ' 3 !-V.
- The value is rated according to Rthj-pcb * *
- Logic level VGS(th) 175 °C maximum junction temperature 100% avalanche rated 1 2 3 4 PowerFLAT™ 5x6
