STL8N10LF3 Description
This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance. $ ' 3 !-V Table 1. Device summary Marking 8N10LF3 Package PowerFLAT™ 5x6 Packaging Tape and reel Order code STL8N10LF3 January 2013 This is information on a...
STL8N10LF3 Key Features
- Logic level VGS(th) 175 °C maximum junction temperature 100% avalanche rated