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STL8N6F7 Datasheet N-CHANNEL POWER MOSFET

Manufacturer: STMicroelectronics

General Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

S(1, 2, 3) Order code STL8N6F7 1234 Marking 8N6F7 AM15810v1 Table 1: Device summary Package PowerFLAT™ 3.3x3.3 Packing Tape and reel October 2015 DocID028258 Rev 2 This is information on a product in full production.

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Overview

STL8N6F7 N-channel 60 V, 0.019 Ω typ., 8 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 3.3x3.3 package Datasheet - production data 1 2 3 4 PowerFLAT™ 3.3x3.

Key Features

  • Order code STL8N6F7 VDS 60 V RDS(on) max 0.023 Ω ID 8A.
  • Among the lowest RDS(on) on the market.
  • Excellent figure of merit (FoM).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness.