STL8N6F7 Overview
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. S(1, 2, 3) Order code STL8N6F7 1234 Marking 8N6F7 AM15810v1 Table 1: Device summary Package PowerFLAT™ 3.3x3.3 Packing Tape and reel October 2015 DocID028258 Rev 2 This is...
STL8N6F7 Key Features
- Among the lowest RDS(on) on the market
- Excellent figure of merit (FoM)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness