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STN1HNC60 Datasheet PDF

STMicroelectronics STN1HNC60

N-CHANNEL MOSFET

Part No. STN1HNC60
Datasheet STN1HNC60 Download
Manufacturer
STMicroelectronics
Description N-CHANNEL MOSFET
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STN1HNC60 datasheet page 1 preview

DESCRIPTION

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

APPLICATIONS

AC ADAPTORS AND BATTERY CHARGERS s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT s INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID ID IDM (1) Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 600 600 ±30 0.4 0.25 1.6 2.5 0.02 3.5 –65 to 150 150 (1)ISD ≤0.4A, di/dt ≤100A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX Unit V V V A A A W W/°C V/ns °C °C 1/8 PTOT dv/dt Tstg Tj May 20...
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