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STN690A - High performance low voltage NPN transistor

Description

cThe device in manufactured in low voltage NPN uplanar technology by using a “Base Island” layout.

dThe resulting transistor shows exceptional high rogain performance coupled with very low Obsolete Psaturation voltage.

Figure 1.

Features

  • Very low collector to emitter saturation voltage.
  • DC current gain, hFE > 100.
  • 3 A continuous collector current t(s).
  • 40 V breakdown voltage V(BR)CER.
  • SOT-223 plastic package for surface mounting uccircuits in tape and reel packaging rod.

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STN690A High performance low voltage NPN transistor Features ■ Very low collector to emitter saturation voltage ■ DC current gain, hFE > 100 ■ 3 A continuous collector current t(s)■ 40 V breakdown voltage V(BR)CER ■ SOT-223 plastic package for surface mounting uccircuits in tape and reel packaging rodApplications te P■ Power management in portable equipment le■ Voltage regulation in bias supply circuits o■ Switching regulator in battery charger sapplications Ob■ Heavy load driver t(s) -Description cThe device in manufactured in low voltage NPN uplanar technology by using a “Base Island” layout. dThe resulting transistor shows exceptional high rogain performance coupled with very low Obsolete Psaturation voltage. 4 3 2 1 SOT-223 Figure 1. Internal schematic diagram Table 1.
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