STN690A Description
cThe device in manufactured in low voltage NPN uplanar technology by using a “Base Island” layout. dThe resulting transistor shows exceptional high rogain performance coupled with very low Obsolete Psaturation voltage. 4 3 2 1 SOT-223 Figure.
STN690A Key Features
- Very low collector to emitter saturation voltage
- DC current gain, hFE > 100
- 3 A continuous collector current
- SOT-223 plastic package for surface mounting