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STN878 - NPN transistor

General Description

ObThe devices are manufactured in low voltage NPN -planar technology with “base island” layout.

Obsolete Producvoltage.

Figure 1.

Key Features

  • Very low collector to emitter saturation voltage.
  • DC current gain, hFE >100.
  • 5 A continuous collector current t(s).

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD878 STN878 High current, high performance, low voltage NPN transistors Features ■ Very low collector to emitter saturation voltage ■ DC current gain, hFE >100 ■ 5 A continuous collector current t(s)Applications uc■ Power management in portable equipment rod■ Voltage regulation in bias supply circuits P■ Switching regulator in battery charger teapplications le■ Heavy load driver soDescription ObThe devices are manufactured in low voltage NPN -planar technology with “base island” layout. the t(s)resulting transistor shows exceptional high gain performance coupled with very low saturation Obsolete Producvoltage. 4 3 2 1 SOT-223 4 3 1 DPAK Figure 1. Internal schematic diagram Table 1.