STMicroelectronics STP13N65M2
This device is an N-channel Power MOSFET developed using MDmesh M2 S(3) technology.- Max Operating Temp : 150°C
Source:
Octopart
| Part No. | STP13N65M2 |
|---|---|
| Datasheet | STP13N65M2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 650V 10A N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
TAB TO-220 1 23 D(2, TAB) Order code STP13N65M2 VDS 650 V RDS(on) max. 430 mΩ ID 10 A● Extremely low gate charge
● Excellent output capacitance (Coss) profile
● 100% avalanche tested
● Zener-protected
APPLICATIONS
● Switching applications G(1)DESCRIPTION
Thanks to its strip layout and an improved vertical structure, the device AM01476v1_tab exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STP13N65M2 Product summary Order code STP13N65M2 Marking 13N65M2 Package TO-220 Packing Tube DS10587 - Rev 2 - April 2026 For further information, contact your local STMicroelectronics sales office. STP13N65M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range TJ Operating junction temperature range 1.
